PMEG2005CT Просмотр технического описания (PDF) - NXP Semiconductors.
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PMEG2005CT Datasheet PDF : 14 Pages
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NXP Semiconductors
PMEG2005CT
500 mA low VF dual MEGA Schottky barrier rectifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Per device; one diode loaded
Ptot
total power dissipation Tamb ≤ 25 °C
[3] -
[4] -
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
330
mW
400
mW
460
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1]
[2] -
-
375 K/W
[3] -
-
310 K/W
[4] -
-
270 K/W
[5] -
-
60 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
PMEG2005CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
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