PMEG2005CT Просмотр технического описания (PDF) - NXP Semiconductors.
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PMEG2005CT Datasheet PDF : 14 Pages
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NXP Semiconductors
PMEG2005CT
500 mA low VF dual MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode (diode 1)
anode (diode 2)
common cathode
Simplified outline Graphic symbol
3
3
1
2
1
2
006aaa438
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMEG2005CT
-
plastic surface-mounted package; 3 leads
Version
SOT23
4. Marking
Table 4. Marking codes
Type number
PMEG2005CT
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
P8*
PMEG2005CT
Product data sheet
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Per diode
VR
reverse voltage
Tj = 25 °C
-
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
IFRM
Tamb ≤ 100 °C
[1] -
Tsp ≤ 130 °C
-
repetitive peak forward tp ≤ 1 ms;
-
current
δ ≤ 0.25
IFSM
non-repetitive peak
square wave;
[2] -
forward current
tp = 8 ms
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 June 2010
Max Unit
20
V
0.5
A
0.5
A
3.9
A
10
A
© NXP B.V. 2010. All rights reserved.
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