PMBD6050 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

PMBD6050

High-speed diode

NXP Semiconductors. 

NXP Semiconductors

High-speed diode

Product data sheet

PMBD6050

handbook1, 0ha2lfpage

IR

(µA)

10

(1)

(2)

(3)

1

MBG379

10 1

10 2

0

100

Tj (oC)

200

(1) VR = 50 V; maximum values.

(2) VR = 50 V; typical values.

(3) VR = 30 V; typical values.

Fig.5 Reverse current as a function of junction

temperature.

0.8

handbook, halfpage

Cd

(pF)

0.6

0.4

MBG446

0.2

0

0

4

8

12 VR (V) 16

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

RS = 50 Ω

V = VR IF x R S

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

R i = 50 Ω

VR

MGA881

tr

tp

10%

90%

input signal

t

IF

t rr

t

(1)

output signal

(1) IR = 1 mA.

2004 Jan 14

Fig.7 Reverse recovery voltage test circuit and waveforms.

6

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