PMBD6050 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

PMBD6050

High-speed diode

NXP Semiconductors. 

NXP Semiconductors

High-speed diode

Product data sheet

PMBD6050

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MAX.

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

715

855

1

1.25

VR = 50 V

VR = 50 V; Tj = 150 °C

f = 1 MHz; VR = 0; see Fig.6

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured

at IR = 1 mA; see Fig.7

when switched from IF = 10 mA;

tr = 20 ns; see Fig.8

100

50

1.5

4

1.75

UNIT

mV

mV

V

V

nA

µA

pF

ns

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-tp)

Rth(j-a)

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Note

1. Device mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

330

500

UNIT

K/W

K/W

2004 Jan 14

4

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