PMBD2837 Просмотр технического описания (PDF) - Philips Electronics
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PMBD2837 Datasheet PDF : 8 Pages
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Philips Semiconductors
High-speed double diodes
Product specification
PMBD2837; PMBD2838
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
PMBD2837
PMBD2838
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MIN. MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
−
715 mV
−
855 mV
−
1V
IF = 150 mA
−
1.25 V
see Fig.5
VR = 30 V
−
100 nA
VR = 30 V; Tj = 150 °C
VR = 50 V
VR = 50 V; Tj = 150 °C
−
40 µA
−
100 nA
−
50 µA
f = 1 MHz; VR = 0; see Fig.6
−
when switched from IF = 10 mA to
−
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
2.5 pF
4 ns
when switched from IF = 10 mA;
−
tr = 20 ns; see Fig.8
1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1996 Sep 18
4
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