PM6670STR(2008) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

PM6670STR
(Rev.:2008)

Complete DDR2/3 memory power supply controller

STMicroelectronics 

PM6670S

Pin settings

Table 2. Pin functions (continued)

N°

Pin

Function

18

VCC

+5 V Low-side gate driver supply. Bypass with a 100 nF capacitor to PGND.

Current Sense Input for the switching section. This pin must be connected

19

CSNS

through a resistor to the drain of the synchronous rectifier (RDSon sensing) to

set the current limit threshold.

20

PHASE Switch node connection and return path for the high-side gate driver.

21

HGATE High-side gate driver output

22

BOOT

Bootstrap capacitor connection. Positive Supply Input of the High-side Gate

Driver.

Linear regulator input. Connect to VDDQ in normal configuration or to a

23

LDOIN

lower supply to reduce the power dissipation. A 10 µF bypass ceramic

capacitor is suggested for noise rejection enhancement. See Section 7:

Device description on page 19

24

VTT

LDO linear regulator output. Bypass with a 20 µF (2x10 µF MLCC) filter

capacitor.

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