PM6670AS
Electrical characteristics
Table 6.
Symbol
Electrical characteristics (continued)
Parameter
Test condition
Min Typ Max Unit
VTTREF discharge
resistance in non-tracking
discharge mode
VDDQ Output threshold
synchronous for final tracking
to non-tracking discharge
transition
1
1.5
2
kΩ
0.2
0.4
0.6
V
VTT LDO section
ILDOIN,ON
LDO input bias current in full-
on state
S3 = S5 = +5 V,
No Load on VTT
1
10
ILDOIN, LDO input bias current in
STR suspend-to-RAM state
S3 = 0 V, S5 = +5 V,
No Load on VTT
10
μA
ILDOIN, LDO input bias current in
STD suspend-to-disk state
S3 = S5 = 0 V, No Load on VTT
1
IVTTSNS, VTTSNS bias current
S3 = +5 V, S5 = +5 V,
1
BIAS
VVTTSNS = VVSNS /2
IVTTSNS, VTTSNS leakage current
LEAK
S3 = 0V, S5 = +5 V,
VVTTSNS = VVSNS /2
1
μA
IVTT,LEAK VTT leakage current
S3 = 0V, S5 = +5 V,
VVTT = VVSNS /2
-10
10
LDO linear regulator output S3 = S5= +5 V, IVTT = 0 A, MODE =
voltage (DDR2)
DDRSEL = +5 V
0.9
LDO linear regulator output
voltage (DDR3)
S3 = S5= +5 V, IVTT = 0 A,
MODE = +5 V, DDRSEL = 0 V
V
0.75
VVTT
IVTT,CL
S3 = S5 = MODE = + 5 V,
-1 mA < IVTT < 1 mA
LDO output accuracy respect S3 = S5 = MODE = +5 V,
to VTTREF
-1 A < IVTT < 1 A
S3 = S5 = MODE = +5 V,
-2 A < IVTT < 2 A
LDO source current limit
VVTT < 1.10*(VVSNS /2)
VVTT > 1.10*(VVSNS /2)
LDO sink current limit
VVTT > 0.90*(VVSNS /2)
VVTT < 0.90*(VVSNS /2)
-20
20
-25
25
mV
-35
35
2
2.3
3
1
1.15 1.4
A
-3
-2.3
-2
-1.4 -1.15 -1
VTTREF section
VTTREF output voltage
IVTTREF = 0 A, VVSNS = 1.8 V
0.9
V
VVTTREF VTTREF output voltage
-15 mA < IVTTREF < 15 mA, VVSNS =
accuracy respect to VSNS/2 1.8 V
-2
2
%
IVTTREF VTTREF current limit
VTTREF = 0 or VSNS
±40
mA
Doc ID 14436 Rev 2
11/53