PM6670ASTR(2008) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

PM6670ASTR
(Rev.:2008)

Complete DDR2/3 memory power supplies controller

STMicroelectronics 

PM6670AS

4

Electrical characteristics

Electrical characteristics

Table 6.

Symbol

Electrical characteristics

TA = -25 °C to 85 °C , VCC = AVCC = +5 V and LDOIN connected to VDDQ output if not

otherwise specified (1)

Parameter

Test condition

Min Typ Max Unit

Supply section

IIN Operating current

ISTR Operating current in STR

S3, S5, MODE and DDRSEL

connected to AVCC, No Load on

VTT and VTTREF Outputs.

VCC connected to AVCC

S5, MODE and DDRSEL connected

to AVCC, S3 tied to SGND, No Load

on VTTREF.

VCC connected to AVCC

0.8

2

mA

0.6

1

ISH

Operating current in

shutdown

S3 and S5 tied to SGND.

Discharge Mode active.

VCC connected to AVCC

1

10

µA

UVLO

AVCC under voltage lockout

upper threshold

AVCC under voltage lockout

lower threshold

4.1 4.25 4.4

V

3.85 4.0

4.1

UVLO hysteresis

70

mV

ON-time (SMPS)

tON On-time duration

OFF-time (SMPS)

MODE and

DDRSEL

high,

VVSNS = 2 V

VOSC = 300 mV

VOSC = 500 mV

650 750 850

ns

390 450 510

tOFFMIN Minimum Off Time

Voltage reference

300 350

ns

Voltage accuracy

Load regulation

Undervoltage lockout fault

threshold

4.5 V < VIN < 36 V

-50 µA< IVREF < 50 µA

1.224 1.237 1.249 V

-4

4

mV

800

VDDQ output

DDR3 VDDQ output voltage

MODE connected to AVCC,

DDRSEL tied to SGND, No Load

1.5

V

VVDDQ DDR2 VDDQ output voltage

MODE and DDRSEL connected to

AVCC, No Load

1.8

Feedback accuracy

MODE and DDRSEL connected to

AVCC, no load

-1.5

1.5

%

9/54

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