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PM6670ASTR(2008) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
PM6670ASTR
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
PM6670ASTR Datasheet PDF : 54 Pages
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Electrical data
3
Electrical data
PM6670AS
3.1
Maximum rating
Table 3. Absolute maximum ratings (1)
Symbol
Parameter
Value
Unit
VAVCC
VVCC
AVCC to SGND
VCC to SGND
PGND, VTTGND to SGND
-0.3 to 6
-0.3 to 6
-0.3 to 0.3
HGATE and BOOT to PHASE
-0.3 to 6
VPHASE
HGATE and BOOT to PGND
PHASE to SGND
LGATE to PGND
CSNS, PG, S3, S5, DSCG, COMP, VSNS,
VOSC, VREF, MODE, DDRSEL to GND
-0.3 to 44
-0.3 to 38
V
-0.3 to VVCC +0.3
-0.3 to VAVCC + 0.3
VTTREF, VREF, VTT, VTTSNS to SGND
-0.3 to VAVCC + 0.3
LDOIN, VTT, VTTREF, LDOIN to VTTGND
-0.3 to VAVCC + 0.3
PTOT
Power dissipation @TA = 25 °C
2.3
W
1. Free air operating conditions unless otherwise specified. Stresses beyond those listed under "absolute
maximum ratings" may cause permanent damage to the device. Exposure to absolute maximum rated
conditions for extended periods may affect device reliability.
3.2
Thermal data
Table 4. Thermal data
Symbol
Parameter
RthJA
TSTG
TA
TJ
Thermal resistance junction to ambient
Storage temperature range
Operating ambient temperature range
Junction operating temperature range
Value
42
- 50 to 150
- 40 to 125
- 40 to 125
Unit
°C/W
°C
°C
°C
3.3
Recommended operating conditions
Table 5. Recommended operating conditions
Symbol
Parameter
VIN
VAVCC
VVCC
Input voltage range
IC supply voltage
IC supply voltage
Min Typ Max Unit
4.5
36
4.5
5.5
V
4.5
5.5
8/54

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