PM6641TR(2008) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

PM6641TR
(Rev.:2008)

Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC (UMPC) applications

STMicroelectronics 

PM6641

Electrical characteristics

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Values

Unit

Min Typ Max

Soft end section – chipset 1.05 V rail

Discharge resistance

LS Turn-on VFB_1SX

VFB_S1X to OUT_X

Threshold with internal divider

LS Turn-on VFB_1SX

VFB_S1X to external divider

Threshold with external divider

25

Ω

0.2

V

0.16

Power management section – chipset 1.05 V rail

EN_1S05 Turn-Off level

EN_1S05 Turn-On level

VAVCC = +5 V

0.8

V

2

Switching node – DDR2/3 rails

tOnmin

RDSon,HS

RDSon,LS

Minimum On-Time

High side PMOS Ron

Low side NMOS Ron

IINLEAK VIN_1S8 leakage current

Peak current limit

VAVCC = VVCC = 5 V,

all EN_1S8 low

RCSNS = 50 kΩ

VIN =

+5 V

VIN =

+3.3 V

200

ns

90

130

mΩ

80

120

1

µA

1

6.1

A

Soft end section – DDR2/3 rails

VDDQ discharge resistance in

non-tracking discharge mode

VTTREF discharge resistance

in non-tracking discharge mode

VTTFB discharge resistance in

non-tracking discharge mode

VFB_1SX Threshold for final

tracking/Non-tracking discharge VFB_S1X to OUT_X

transition with internal divider

VFB_1SX Threshold for final

tracking/Non-tracking discharge VFB_S1X to external divider

transition with external divider

25

Ω

200

Ω

40

Ω

0.340

V

0.160

V

11/47

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