F13N50 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

Номер в каталоге

Компоненты Описание

производитель

F13N50

500V N-Channel Enhancement Mode MOSFET

PANJIT INTERNATIONAL 

PJP13N50 / PJF13N50

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

12

ID =12A

10

VDS=400V

8

VDS=250V

VDS=100V

6

4

2

0

0

10 20 30 40 50 60

Qg - Gate Charge (nC)

Fig. 7 Gate Charge Waveform

1.2

ID = 250µA

1.1

1

0.9

0.8

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.9 Breakdown Voltage vs Junction Temperature

100

VGS = 0V

10

TJ = 125oC

1

0.1

25oC

-55oC

0.01

0.2

0.4 0.6 0.8

1

1.2 1.4

VSD - Source-to-Drain Voltage (V)

Fig.8 Source-Drain Diode Forward Voltage

Jan 27,2010-REV.00

PAGE. 4

Share Link: