PJF10N65 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

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производитель

PJF10N65

650V N-Channel Enhancement Mode MOSFET

PANJIT INTERNATIONAL 

PJP10N65 / PJF10N65

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

12

ID =10A

10

VDS=520V

8

VDS=325V

VDS=130V

6

4

2

0

0 4 8 12 16 20 24 28 32 36 40

Qg - Gate Charge (nC)

Fig. 7 Gate Charge Waveform

1.2

ID = 250µA

1.1

1

0.9

0.8

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.9 Breakdown Voltage vs Junction Temperature

100

VGS = 0V

10

TJ = 125oC

1

0.1

25oC

-55oC

0.01

0.2 0.4 0.6 0.8

1

1.2 1.4

VSD - Source-to-Drain Voltage (V)

Fig.8 Source-Drain Diode Forward Voltage

STAD-DEC.25.2009

PAGE. 4

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