IRF9233 Просмотр технического описания (PDF) - Intersil
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IRF9233 Datasheet PDF : 7 Pages
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IRF9230, IRF9231, IRF9232, IRF9233
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9230
IRF9231
IRF9232
IRF9233
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS
Continuous Drain
TC = 100oC . . .
Current .
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ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-200
-200
-6.5
-4.0
-26
±20
75
0.6
-150
-150
-6.5
-4.0
-26
±20
75
0.6
-200
-200
-5.5
-3.5
-22
±20
75
0.6
-150
-150
-5.5
-3.5
-22
±20
75
0.6
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS
500
500
500
500
mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
260
300
260
300
260
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
IRF9230, IRF9232
BVDSS ID = -250µA, VGS = 0V, (Figure10)
IRF9231, IRF9233
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF9230, IRF9231
VGS(TH) VGS = VDS, ID = -250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V
TC = 125oC
ID(ON)
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V,
(Figure 7)
IRF9232, IRF9233
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF9230, IRF9231
IGSS
rDS(ON)
VGS = ±20V
ID = -3.5A, VGS = -10V, (Figures 8, 9)
IRF9232, IRF9233
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A,
(Figure 12)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A,
RG = 50Ω, VGS = -10V, (Figure 17, 18)
RL = 14.7Ω for VDSS = 200V
RL = 10.9Ω for VDSS = 150V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated
BVDSS, (Figures 14, 19, 20)
Gate Charge is Essentially Independent
of Operating Temperature
MIN TYP MAX UNITS
-200 -
-150 -
-2
-
-
-
-
-
-
V
-
V
-4
V
-25
µA
-250 µA
-6.5
-
-
A
-5.5
-
-
A
-
-
±100 nA
-
0.5 0.8
Ω
-
0.8 1.2
Ω
2.2 3.5
-
S
-
30
50
ns
-
50 100
ns
-
50 100
ns
-
40
80
ns
-
31
45
nC
-
18
-
nC
-
13
-
nC
6-2
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