IRFF9230 Просмотр технического описания (PDF) - Intersil
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IRFF9230 Datasheet PDF : 7 Pages
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IRFF9230
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
Modified MOSFET Symbol
ISM
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
-4.0
A
D
-
-
-16
A
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -4.0A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs
-
-
-1.5
V
-
400
-
ns
-
2.6
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 46.9mH, RG = 25Ω, peak IAS = 4.0A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-5
-4
-3
-2
-1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.0110-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
4-116
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