IRFF9230 Просмотр технического описания (PDF) - Intersil
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IRFF9230 Datasheet PDF : 7 Pages
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IRFF9230
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
IRFF9230
-200
-200
-4.0
-16
±20
25
0.2
500
-55 to 150
300
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
ID = -250µA, VGS = 0V, (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
ID = -2.0A, VGS = -10V, (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = -2.0A, (Figure 12)
VDD = 0.5BVDSS, ID ≈ -4.0A, RG = 9.1Ω,
RL = 2.5Ω for BVDSS = -200V
RL = 18.7Ω for BVDSS = -150V
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
VGS = -10V, ID = -4.0A, VDS = 0.8 x Rated BVDSS,
IG(REF) = -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
Measured From the Drain
Lead, 5mm (0.2in) From
Package to Center of Die
Measured From the Source
Lead, 5mm (0.2in) From
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
LD
G
LS
MIN
-200
-2
-
-
-4.0
-
-
2.2
-
-
-
-
-
-
-
-
-
-
-
-
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
RθJC
RθJA
Typical Socket Mount
S
-
-
TYP MAX UNITS
-
-
V
-
-4
V
-
-25
µA
-
-250 µA
-
-
A
-
±100 nA
0.5 0.800 Ω
3.5
-
S
30
50
ns
50
100
ns
50
100
ns
40
80
ns
31
45
nC
18
-
nC
13
-
nC
550
-
pF
170
-
pF
50
-
pF
5.0
-
nH
15
-
nH
-
5.0 oC/W
-
175 oC/W
4-115
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