PI3033B Просмотр технического описания (PDF) - AMI Semiconductor

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PI3033B

Contact Image Sensor

AMI Semiconductor 

Preliminary PI3033B datasheet

Electro-Optical Characteristics (25o C)

The electro-optical characteristics of PI3033B imaging sensor chip are listed in Table 2. These values

are measured at 25o C.

Parameters

Number of Photo-elements

Pixel-to-pixel spacing

Line scanning rate

Clock frequency

Output voltage

Output voltage non-uniformity

Dark output voltage

Dark output non-uniformity

Adjacent Pixel non-uniformity

Chip-to-chip non-uniformity

Symbols

Tint (1)

Fclk (2)

Vpavg (3)

Up (4)

Vd (5)

Ud (6)

Upadj (7)

Ucc (8)

Typical

64

125

864

2.0

1.0

± 7.5

<20

<10

<7.5

± 7.5

Units

elements

µm

µs/line

MHz

V

%

mV

mV

%

%

Notes

See note 2 for higher clock

speed. (maximum 5 MHz)

Exp = 1.8 X 10 –2 µJ/cm 2

Note 5 & 3

Note 6 & 3

Table 2. Electro-Optical Characteristic

Notes: (1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

Tint stands for the line scanning rate or the integration time. It is determined by

the time interval between two start pulses.

Fclk stands for the input clock frequency. For Fclk > 2.0 MHz see note 3 and the

section Video Output Response Under Exposure.

Vpavg = ∑Vp(n)/Npixels (average level in one line scan).

Where Vp(n) is the amplitude of nth pixel in the sensor chip and

Npixels is the total number of pixels in sensor chip. Vpavg is converted from

impulse current video pixel into a voltage output. See Figure 4, Video Pixel

Output in section Output Circuit Of The Image Sensor and Figure 5, Video

Output Test and Application Circuit in section Signal Conversion Circuit on page

6 and 7.

Exp = LP x Tint, where LP is light power (Yellow-Green) and Tint is as defined

above. See Figure 6, Vpavg Output versus Light Exposure in section Video

Output Response Under Exposure, on page 8.

Up is the uniformity specification, measured under a uniform exposing light

exposure. Up = [Vp(max) - Vpavg] / Vpavg x 100% or [Vpavg - Vp(min)] / Vpavg}

x 100%, whichever is greater.

Where Vp(max) is the maximum pixel output voltage in the light.

Vp(min) is the minimum pixel output voltage in the light.

Vd = ∑Vp(n)/Npixels. Where Vp(n) is the pixels signal amplitude of the nth pixel

of the sensor. Dark is where the sensor is placed in the dark environment.

Ud = Vdmax – Vdmin. Dark is same definition as above.

Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)) x 100%. Upadj is the nonuniformity in

percentage. It is the amplitude difference between two neighboring pixels.

Ucc is the uniformity specifications, measured among the good die on the wafer.

Under uniform light exposure the sensors are measured and calculated with

following algorithm: Vpavg of all the good dies on the wafer are averaged and

assigned VGpavg. Then the die with maximum Vpavg is assigned Vpavg(max),

Page 5 of 13 Date: 03/18/05

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