PHX2N50E Просмотр технического описания (PDF) - Philips Electronics
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PHX2N50E Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54
0.5
2.5
Product specification
PHX2N50E
1.0 (2x)
0.9
0.7
1.3
Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
December 1998
7
Rev 1.200
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