PHX2N50E Просмотр технического описания (PDF) - Philips Electronics

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производитель

PHX2N50E

PowerMOS transistors Avalanche energy rated

Philips Electronics 

Philips Semiconductors

PowerMOS transistors

Avalanche energy rated

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current Ths = 25˚C

(body diode)

ISM

Pulsed source current (body Ths = 25˚C

diode)

VSD

Diode forward voltage

IS = 2 A; VGS = 0 V

trr

Reverse recovery time

IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs

Qrr

Reverse recovery charge

Product specification

PHX2N50E

MIN. TYP. MAX. UNIT

-

-

2

A

-

-

8

A

-

- 1.2 V

- 300 - ns

- 2.1 - µC

December 1998

3

Rev 1.200

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