PHB3N40E Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
PHB3N40E Datasheet PDF : 10 Pages
| |||
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP3N40E, PHB3N40E, PHD3N40E
Gate-Source voltage, VGS (Volts)
20
ID = 2.5 A
200 V
100 V
15
PHP2N40
VDD = 320 V
10
5
0
0
10
20
30
40
Gate charge, Qg (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Switching times, td(on), tr, td(off), tf (ns)
1000
VDD = 200V
RD = 82 Ohms
Tj = 25 C
100
td(off)
tr
10 tf
td(on)
PHP2N40
1
0
20
40
60
80
100
Gate resistance, RG (Ohms)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
10 Source-drain diode current, IF(A)
VGS = 0 V
8
150 C
6
PHP2N40
Tj = 25 C
4
2
0
0
0.5
1
1.5
Source-Drain voltage, VSDS (V)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Non-repetitive Avalanche current, IAS (A)
10
Tj prior to avalanche = 25 C
1
VDS
tp
ID
125 C
0.1
1E-06
PHP3N40E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
10
Tj prior to avalanche = 25 C
1
125 C
0.1
0.01
1E-06
PHP3N40E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
December 1998
6
Rev 1.200
Share Link: 