PF01411A Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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PF01411A

MOS FET Power Amplifier Module for E-GSM Handy Phone

Hitachi -> Renesas Electronics 

PF01411A

MOS FET Power Amplifier Module

for E-GSM Handy Phone

Application

• For E-GSM class4 880 to 915 MHz

• For 4.8V nominal battery use

Features

• High gain 3stage amplifier : 0 dBm input

• Lead less thin & Small package : 2 mm Max, 0.2cc

• High efficiency : 45% Typ at 3.8 W

• Wide gain control range : 90 dB Typ

Pin Arrangement

• RF-K

4 GG 3

G2

1G

1: Pin

2: Vapc

3: Vdd

4: Pout

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Supply voltage

Supply current

VAPC voltage

Input power

Operating case temperature

Storage temperature

Output power

Symbol

VDD

I DD

VAPC

Pin

Tc (op)

Tstg

Pout

Rating

10

3

4

10

–30 to +100

–30 to +100

5

ADE-208-433C (Z)

4th Edition

February 1997

Unit

V

A

V

mW

°C

°C

W

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