PEMH17_PUMH17 Просмотр технического описания (PDF) - NXP Semiconductors.
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PEMH17_PUMH17 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
103
hFE
102
10
006aaa184
(2) (1)
(3)
102
VCEsat
(mV)
006aaa185
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
102
006aaa186
VI(on)
(V)
10
(2) (1)
(3)
1
10
10−1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
10
006aaa187
VI(off)
(V)
(1)
(2)
1
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PEMH17_PUMH17_3
Product data sheet
Rev. 03 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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