PUMH16,125 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PUMH16,125 Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
PEMH16; PUMH16
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Min Typ Max
[1] -
-
625
[1][2] -
-
625
[1] -
-
416
[1][2] -
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 μA
VCE = 0.3 V; IC = 2 mA
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
μA
-
-
50 μA
-
-
120 μA
80 -
-
-
-
150 mV
-
0.8
2
1.1
15.4 22
1.7 2.1
-
-
0.5 V
-
V
28.6 kΩ
2.6
2.5 pF
PEMH16_PUMH16_4
Product data sheet
Rev. 04 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 9
Share Link: 