PESDXS2UT Просмотр технического описания (PDF) - NXP Semiconductors.

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PESDXS2UT

Double ESD protection diodes in SOT23 package

NXP Semiconductors. 

NXP Semiconductors

Double ESD protection diodes in SOT23

package

Product data sheet

PESDxS2UT series

SYMBOL

PARAMETER

CONDITIONS

MIN.

Rdiff

differential resistance

PESD3V3S2UT

IR = 1 mA

−

PESD5V2S2UT

IR = 1 mA

−

PESD12VS2UT

IR = 1 mA

−

PESD15VS2UT

IR = 1 mA

−

PESD24VS2UT

IR = 0.5 mA

−

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

TYP.

−

−

−

−

−

MAX.

400

80

200

225

300

UNIT

Ω

Ω

Ω

Ω

Ω

GRAPHICAL DATA

104

Ppp

(W)

103

001aaa147

(1)

102

(2)

10

1

10

102

103

104

tp (µs)

(1) PESD3V3S2UT and PESD5V2S2UT.

(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT

Tamb = 25 °C.

tp = 8/20 µs exponential decay waveform; see Fig.2.

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

1.2

PPP

PPP(25°C)

0.8

001aaa193

0.4

0

0

50

100

150

200

Tj (°C)

Fig.5 Relative variation of peak pulse power as a

function of junction temperature; typical

values.

2004 Apr 15

6

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