PESDXS2UAT Просмотр технического описания (PDF) - NXP Semiconductors.

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PESDXS2UAT

Double ESD protection diodes in SOT23 package

NXP Semiconductors. 

NXP Semiconductors

Double ESD protection diodes

in SOT23 package

Product data sheet

PESDxS2UAT series

SYMBOL

PARAMETER

CONDITIONS

MIN.

Rdiff

differential resistance

PESD3V3S2UAT

IR = 1 mA

−

PESD5V0S2UAT

IR = 1 mA

−

PESD12VS2UAT

IR = 1 mA

−

PESD15VS2UAT

IR = 1 mA

−

PESD24VS2UAT

IR = 0.5 mA

−

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

TYP.

−

−

−

−

−

MAX.

400

80

200

225

300

UNIT

Ω

Ω

Ω

Ω

Ω

GRAPHICAL DATA

104

Ppp

(W)

103

001aaa147

(1)

102

(2)

10

1

10

102

103

104

tp (µs)

(1) PESD3V3S2UAT and PESD5V0S2UAT.

(2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT

Tamb = 25 °C.

tp = 8/20 µs exponential decay waveform; see Fig.2.

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

1.2

PPP

PPP(25°C)

0.8

001aaa193

0.4

0

0

50

100

150

200

Tj (°C)

Fig.5 Relative variation of peak pulse power as a

function of junction temperature; typical

values.

2004 Feb 18

6

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