PESDXS2UAT Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
PESDXS2UAT Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
Double ESD protection diodes
in SOT23 package
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VRWM
IRM
VBR
Cd
V(CL)R
reverse stand-off voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
reverse leakage current
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
breakdown voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
diode capacitance
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
clamping voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
CONDITIONS
VRWM = 3.3 V
VRWM = 5 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IZ = 5 mA
f = 1 MHz; VR = 0 V
notes 1 and 2
Ipp = 1 A
Ipp = 18 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
Product data sheet
PESDxS2UAT series
MIN. TYP. MAX. UNIT
−
−
3.3
V
−
−
5
V
−
−
12
V
−
−
15
V
−
−
24
V
−
0.7
2
µA
−
0.1
1
µA
−
<1
50
nA
−
<1
50
nA
−
<1
50
nA
5.2
5.6
6.0
V
6.4
6.8
7.2
V
14.7 15.0 15.3 V
17.6 18.0 18.4 V
26.5 27.0 27.5 V
−
207
300
pF
−
152
200
pF
−
38
75
pF
−
32
70
pF
−
23
50
pF
−
−
7
V
−
−
20
V
−
−
9
V
−
−
20
V
−
−
19
V
−
−
35
V
−
−
23
V
−
−
40
V
−
−
36
V
−
−
70
V
2004 Feb 18
5
Share Link: 