SDM4953 Просмотр технического описания (PDF) - Samhop Mircroelectronics

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Компоненты Описание

производитель

SDM4953

Dual P-C hannel E nhancement Mode F ield E ffect T ransistor

Samhop Mircroelectronics 

S DM4953

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min Typ C Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =-1.7A

5

-0.8 -1.2 V

Notes

a.Surface Mounted on FR 4 Board, t<= 10sec.

b.P ulse Test:P ulse Width<= 300us, Duty C ycle<= 2%.

c.Guaranteed by design, not subject to production testing.

25

20

-V GS =10,9,8,7,6,5V

15

4V

10

5

3V

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

20

-55 C

25 C

16

T j=125 C

12

8

4

0

0

0.5 1

1.5 2

2.5 3

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

3000

2500

2000

1500

1000

500

0

0

5 10 15

C is s

C oss

C rss

20 25 30

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

1.8

V GS =-10V

1.6 ID=-4.9A

1.4

1.2

1.0

0.8

0.6

-50

0

50

100

150

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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