SDM4953 Просмотр технического описания (PDF) - Samhop Mircroelectronics

Номер в каталоге

Компоненты Описание

производитель

SDM4953

Dual P-C hannel E nhancement Mode F ield E ffect T ransistor

Samhop Mircroelectronics 

S DM4953

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol

C ondition

Min Typ C Max Unit

OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30

V

Zero Gate Voltage Drain C urrent

IDSS

VDS =-24V, VGS =0V

-1 uA

Gate-Body Leakage

ON CHARACTERISTICS b

IGSS

VGS = 20V, VDS= 0V

100 nA

Gate Threshold Voltage

V G S (th)

VDS =VGS, ID = -250uA -1 -1.5 -3 V

Drain-S ource On-S tate R esistance R DS(ON)

VGS =-10V, ID= -4.9A

VGS =-4.5V, ID =-3.6A

43 53 m-ohm

70 95 m-ohm

On-S tate Drain Current

ID(ON)

VDS = -5V, VGS = -10V -20

A

Forward Transconductance

gFS

VDS =-15V, ID = - 4.9A

9

S

DYNAMIC CHARACTERISTICS c

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

VDS =-15V, VGS = 0V

f =1.0MHZ

860

PF

470

PF

180

PF

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

Fall Time

tD(ON)

VD = -15V,

tr

R L =15 ohm

ID = -1A,

tD(O F F )

VGEN = -10V,

tf

R GEN =6 ohm

9 20 ns

10 40 ns

37 90 ns

23 110 ns

Total Gate C harge

Qg VDS=-15V,ID =-4.9A,VGS=-10V

VDS=-15V,ID =-4.9A,VGS=-4.5V

15 20 nC

8.9 10.7 nC

Gate-S ource Charge

Gate-Drain C harge

Qgs

VDS =-15V, ID = - 4.9A,

Qgd

VGS =-10V

3

nC

4

nC

2

Share Link: