PCF5079T Просмотр технического описания (PDF) - Philips Electronics
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PCF5079T Datasheet PDF : 28 Pages
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Philips Semiconductors
Dual-band power amplifier controller for
GSM, PCN and DCS
Product specification
PCF5079
1 FEATURES
• Compatible with baseband interface family PCF5073x
• Two power sensor inputs
• Temperature compensation of sensor signal
• Active filter for Digital-to-Analog Converter (DAC) input
• Power Amplifier (PA) protection against mismatching
• Bias current source for detector diodes
• Generation of pre-bias level for PA at start of burst
(home position)
• Compatible with a wide range of silicon PAs
• Compatible with multislot class 12
• Dual output with internal switch
• Two different transfer functions
• Possibility to adapt dynamic transfer functions
• Very small outline package (3 × 3 mm).
2 APPLICATIONS
• Global System for Mobile communication (GSM)
• Personal Communications Network (PCN) systems.
3 GENERAL DESCRIPTION
This CMOS device integrates an amplifier for the detected
RF voltage from the sensor, an integrator and an active
filter to build a PA control loop for cellular systems with a
small number of passive components.
4 QUICK REFERENCE DATA
SYMBOL
VDD
IDD(tot)
Tamb
PARAMETER
supply voltage
total supply current
ambient temperature
MIN.
2.5
−
−40
TYP.
3.6
−
−
MAX.
5.0
10
+85
UNIT
V
mA
°C
ORDERING INFORMATION
TYPE NUMBER
PCF5079T/C/1
PCF5079HK/C/1
NAME
TSSOP10
HVSON10
PACKAGE
DESCRIPTION
plastic thin shrink small outline package; 10 leads; body width 3 mm
plastic, heatsink very thin small outline package; no leads;
10 terminals; body 3 × 3 × 0.90 mm
VERSION
SOT552-1
SOT650-1
2001 Nov 21
3
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