DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RFP2P08 Просмотр технического описания (PDF) - Intersil

Номер в каталоге
Компоненты Описание
производитель
RFP2P08 Datasheet PDF : 5 Pages
1 2 3 4 5
RFP2P08, RFP2P10
Typical Performance Curves Unless otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
TJ = MAX RATED
TC = 25oC
1
OPERATION IN THIS AREA
0.10
MAY BE LIMITED BY rDS(ON)
0.01
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
4
PULSE DURATION = 80µs
DUTY CYCLE 2%
TC = 25oC
3
VGS = -20V
2
VGS = -4V
1
VGS = -10V
VGS = -8V
VGS = -7V
VGS = -6V
VGS = -5V
0
-1
-2
-3
-4
-5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
3.5
VDS = -15V
3 PULSE DURATION = 80µs
DUTY CYCLE 2%
2.5
2
-40oC
25oC
1.5
125oC
1
0.5
0
0
-2
-4
-6
-8
-10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSER CHARACTERISTICS
4
VGS = -10V
125oC
PULSE DURATION = 80µs
DUTY CYCLE 2%
3
25oC
2
-40oC
1
0
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]