■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating
Unit
Forward current
IF
*1 Peak forward current IFM
50
mA
1
A
Reverse voltage
VR
6
V
Power dissipation
P
70
mW
Collector-emitter voltage VCEO *4 80
V
Emitter-collector voltage VECO
6
V
Collector current
IC
50
mA
Collector power dissipation PC
150
mW
Total power dissipation Ptot
170
Operating temperature
Topr −30 to +100
Storage temperature
Tstg −40 to +125
*2 Isolation voltage
Viso (rms)
3.75
*3 Soldering temperature
Tsol
260
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Date code "P9" (September 2002) VCEO:35V.
mW
˚C
˚C
kV
˚C
PC357N Series
■ Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
Forward voltage
VF
IF=20mA
−
Input Reverse current
IR
VR=4V
−
Terminal capacitance
Ct
V=0, f=1kHz
−
Collector dark current ICEO
Output Collector-emitter breakdown voltage BVCEO
VCE=50V, IF=0
IC=0.1mA, IF=0
−
*5 80
Emitter-collector breakdown voltage BVECO
IE=10µA, IF=0
6
Collector current
IC
IF=5mA, VCE=5V
2.5
Collector-emitter saturation voltage
Transfer Isolation resistance
charac-
teristics Floating capacitance
Rise time
Response time
Fall time
VCE (sat)
RISO
Cf
tr
tf
IF=20mA, IC=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=2mA, RL=100Ω
−
5×1010
−
−
−
*5 From the production Date code "J5" (May 1997) to "P9" (September 2002), however the products were screened by BVCEO≥70V.
TYP.
1.2
−
30
−
−
−
5
0.1
1×1011
0.6
4
3
MAX.
1.4
10
250
100
−
−
30
0.2
−
1.0
18
18
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A00101EN
4