DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

74LV259D Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге
Компоненты Описание
производитель
74LV259D
Philips
Philips Electronics Philips
74LV259D Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
8-bit addressable latch
Product specification
74LV259
DC ELECTRICAL CHARACTERISTICS (Continued)
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL PARAMETER
TEST CONDITIONS
-40°C to +85°C
MIN
TYP1 MAX
II
Input leakage
current
VCC = 3.6 V; VI = VCC or GND
1.0
ICC
Quiescent supply
current; MSI
VCC = 3.6 V; VI = VCC or GND; IO = 0
20.0
Additional quiescent
ICC supply current per VCC = 2.7 V to 3.6 V; VI = VCC – 0.6 V
500
input
NOTE:
1. All typical values are measured at Tamb = 25°C.
-40°C to +125°C
MIN
MAX
1.0
160
850
UNIT
µA
µA
µA
AC CHARACTERISTICS
GND = 0V; tr = tf 2.5ns; CL = 50pF; RL = 1K
SYMBOL
PARAMETER
WAVEFORM
tPHL/tPLH
Propagation delay
D to Qn
Figure 2
tPHL/tPLH
Propagation delay
An to Qn
Figure 3
tPHL/tPLH
Propagation delay
LE to Qn
Figure 1
tPHL
Propagation delay
MR to Qn
tw
LE pulse width
HIGH or LOW
tw
MR pulse width
LOW
tsu
Set-up time
D, An to LE
Figure 4
Figure 1
Figure 4
Figure 5 and 6
th
Hold time
D to LE
Figure 5
CONDITION
VCC(V)
1.2
2.0
2.7
3.0 to 3.6
1.2
2.0
2.7
3.0 to 3.6
1.2
2.0
2.7
3.0 to 3.6
1.2
2.0
2.7
3.0 to 3.6
2.0
2.7
3.0 to 3.6
2.0
2.7
3.0 to 3.6
1.2
2.0
2.7
3.0 to 3.6
1.2
2.0
2.7
3.0 to 3.6
LIMITS
–40 to +85 °C
MIN TYP1 MAX
105
36
49
26
36
202
29
105
36
49
26
36
202
29
100
34
48
25
35
192
28
90
31
43
23
31
172
25
34
10
25
8
20
62
34
10
25
8
20
62
35
24
12
18
9
14
72
–30
5
–10
5
–8
5
–62
–40 to +125 °C
MIN MAX
61
45
36
61
45
36
60
44
35
53
39
31
41
30
24
41
30
24
29
21
17
5
5
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
1998 May 20
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]