79C0832RT2QK20 Просмотр технического описания (PDF) - MAXWELL TECHNOLOGIES

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79C0832RT2QK20

8 Megabit (256K x 32-Bit) EEPROM MCM

MAXWELL TECHNOLOGIES 

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

PARAMETER

TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(V

CC

=

5V

±

10%,

TA

=

-55

TO

+125°

C)

SYMBOL

SUBGROUPS

MIN 1

MAX

UNITS

Data Latch Time

-150

-200

tDL

9, 10, 11

ns

300

--

400

--

Byte Load Window

-150

-200

tBL

9, 10, 11

µs

100

--

200

--

Byte Load Cycle

-150

-200

tBLC

9, 10, 11

µs

.55

30

.95

30

Time to Device Busy

-150

-200

tDB

9, 10, 11

ns

120

--

170

--

Write Start Time 3

-150

-200

tDW

9, 10, 11

ns

150

--

250

--

RES to Write Setup Time4

-150

-200

tRP

9, 10, 11

µs

100

--

200

--

VCC to RES Setup Time4

-150

-200

tRES

9, 10, 11

1

3

µs

--

--

1. Use this device in a longer cycle than this value.

2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

internal write operation within this value.

3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.

4. Guaranteed by design.

TABLE 9. 79C0832 MODE SELECTION 1

PARAMETER

CE 2

OE

WE

I/O

RES

Read

Standby

Write

Deselect

Write Inhibit

VIL

VIL

VIH

X

VIL

VIH

VIL

VIH

X

X

X

VIL

Data Polling

VIL

VIL

Program Reset

X

X

1. Refer to the recommended DC operating conditions.

2. For CE0-1 only one CE can be used (“on”) at a time.

VIH

DOUT

VH

X

High-Z

X

VIL

DIN

VH

VIH

High-Z

VH

VIH

--

X

X

--

X

VIH

Data Out (I/O7)

VH

X

High-Z

VL

RDY/BUSY

VOH

VOH

VOH --> VOL

VOH

--

--

VOL

VOH

02.14.06 REV 15 All data sheets are subject to change without notice 7

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