HGTP3N60B3D9A Просмотр технического описания (PDF) - Intersil
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HGTP3N60B3D9A Datasheet PDF : 7 Pages
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HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
500
FREQUENCY = 1MHz
400
CIES
300
200
100
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
15
12
150oC
9
6
25oC
-55oC
3
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VEC, FORWARD VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
30
TC = 25oC, dIEC/dt = 200A/µs
25
trr
20
ta
15
10
tb
5
0
0.5
1
2
3
4
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
6
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