HGTP3N60B3D9A Просмотр технического описания (PDF) - Intersil
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HGTP3N60B3D9A Datasheet PDF : 7 Pages
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HGTP3N60B3D, HGT1S3N60B3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
td(ON)I
trI
td(OFF)I
tfI
EON
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)
Turn-Off Energy (Note 1)
EOFF
Diode Forward Voltage
VEC
IEC = 3A
Diode Reverse Recovery Time
trr
IEC = 1A, dIEC/dt = 200A/µs
IEC = 3A, dIEC/dt = 200A/µs
Thermal Resistance Junction To Case
RθJC
IGBT
Diode
MIN TYP MAX UNITS
-
16
-
ns
-
18
-
ns
-
220
295
ns
-
115
175
ns
-
130
140
µJ
-
210
325
µJ
-
2.0
2.5
V
-
-
22
ns
-
-
28
ns
-
-
3.75
oC/W
3.0
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
7
VGE = 15V
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
20 TJ = 150oC, RG = 82Ω, VGE = 15V L = 500µH
18
16
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
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