IRFF9220 Просмотр технического описания (PDF) - Intersil
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IRFF9220 Datasheet PDF : 7 Pages
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IRFF9220
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Rectifier
G
MIN TYP MAX UNITS
-
-
-2.5
A
D
-
-
-10
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -2.5A, VGS = 0V, (Figure 13)
TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs
-
-
-1.5
V
-
300
-
ns
-
1.9
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 69.6mH, RG = 25Ω, peak IAS = 2.5A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-2.5
-2.0
-1.5
-1.0
-0.5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-109
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