HGTG30N120CN Просмотр технического описания (PDF) - Intersil
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HGTG30N120CN Datasheet PDF : 7 Pages
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HGTG30N120CN
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG30N120CN
1200
75
40
240
±20
±30
150A at 1200V
500
4.0
135
-55 to 150
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 30A, L = 400µH, TJ = 125oC.
3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVCES VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 18)
MIN
1200
15
-
-
-
-
-
6.0
-
150
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
600
-
2.1
2.9
6.6
-
-
9.6
260
330
24
21
220
180
2.2
2.8
4.2
MAX
-
-
250
-
8
2.4
3.5
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
-
V
325
nC
420
nC
30
ns
26
ns
260
ns
240
ns
-
mJ
3.5
mJ
4.8
mJ
2
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