P0111DA5AA4 Просмотр технического описания (PDF) - STMicroelectronics
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P0111DA5AA4 Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
P011xx
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current (180° conduction angle)
TO-92
SOT-223
TO-92
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tl = 55 °C
Tamb = 70 °C
Tl = 55 °C
Tamb = 70 °C
Tj = 25 °C
Tj = 25 °C
0.8
0.5
8
7
0.24
Tj = 125 °C
50
Tj = 125 °C
Tj = 125 °C
1
0.1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
P0111 P0115
IGT
VD = 12 V RL = 140 Ω
Min.
4
Max. 25
VGT
Max.
VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ Tj = 125 °C Min.
VRG IRG = 10 µA
Min.
IH
IT = 50 mA RGK = 1 kΩ
Max.
IL
IG = 1 mA RGK = 1 kΩ
Max.
dV/dt VD = 67 % VDRM RGK = 1 kΩ
Tj = 125 °C Min.
80
VTM ITM = 1.6 A tp = 380 µs
Tj = 25 °C Max.
Vt0 Threshold voltage
Tj = 125 °C Max.
Rd Dynamic resistance
Tj = 125 °C Max.
IDRM
IRRM
VDRM = VRRM = 400 V
VDRM = VRRM = 600 V
VDRM = VRRM
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Max.
15
50
0.8
0.1
8
5
6
75
1.95
0.95
600
1
10
100
P0118
0.5
5
75
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
2/9
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