NTE929 Просмотр технического описания (PDF) - NTE Electronics

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NTE929

Integrated Circuit General Purpose, High Current, NPN Transistor Array

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

For Each Transistor

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Collector–Substrate Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Forward Current

Base–Emitter Voltage

Collector–Emitter Saturation Voltage

Gain–Bandwidth Product

Absolute Input Offset Voltage

Absolute Input Offset Current

V(BR)CBO IC = 100µA, IE = 0

V(BR)CEO IC = 1mA, IB = 0

V(BR)CIO ICI = 100µA, IB = 0, IE = 0

V(BR)EBO IE = 500µA, IC = 0

ICEO VCE = 10V, IB = 0

ICBO VCE = 10V, IE = 0

hFE VCE = 3V, IC = 10mA

VCE = 3V, IC = 50mA

VBE VCE = 3V, IC = 10mA

VCE(sat) IC = 50mA, IB = 5mA

fT

VCE = 3V, IC = 10mA

VIO VCE = 3V, IC = 1mA

IIO

VCE = 3V, IC = 1mA

Pin Connection Diagram

Collector Q1 1

Collector Q2 2

Base Q2 3

Emitter Q2 4

Substrate 5

Base Q3 6

Collector Q3 7

Emitter Q3 8

16 Base Q1

15 Emitter Q1

14 Collector Q5

13 Base Q5

12 Emitter Q5

11 Emitter Q4

10 Base Q4

9 Collector Q4

Min Typ Max Unit

20 60 –

V

15 24 –

V

20 60 –

V

5.0 6.9 –

V

–

– 10 µA

–

–

1 µA

40 76 –

40 75 –

0.65 0.74 0.85 V

– 0.4 0.7 V

– 450 – MHz

– 1.2 5.0 mV

– 0.7 2.5 µA

16

1

.245

(6.22)

Min

.785 (19.9)

Max

.100 (2.54)

.700 (17.7)

9

.260 (6.6) Max

8

.200 (5.08)

Max

.300

(7.62)

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