NTE87 Просмотр технического описания (PDF) - NTE Electronics

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NTE87

Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Second Breakdown

VCEO(sus) IC = 100mA, Note 3

ICEO VCE = 250V

ICEX VCE = 250V, VBE(off) = 1.5V

IEBO VEB = 5V

Second Breakdown Collector Current

with Base Forward Bias

ON Characteristics (Note 3)

IS/b VCE = 40V, t = 0.5s (non–repetitive)

VCE = 100V, t = 0.5s (non–repetitive)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter On Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(on)

VCE = 2V, IC = 2A

VCE = 2V, IC = 4A

IC = 2A, IB = 200mA

IC = 4A, IB = 400mA

VCE = 2V, IC = 4A

Current Gain–Bandwidth Product

Output Capacitance

fT

VCE = 10V, IC = 1A, ftest = 1MHz

Cob VCB = 10V, IE = 0, ftest = 1MHz

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

250 – – V

– – 1 mA

– – 500 µA

– – 500 µA

5––A

1.4 – – A

20 – 100

5––

– – 0.8 V

– – 2.5 V

––2V

4 – – MHz

– – 500 pF

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

.215 (5.45)

.430

(10.92)

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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