NTE7186 Просмотр технического описания (PDF) - NTE Electronics
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NTE7186 Datasheet PDF : 3 Pages
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Electrical Characteristics: (VS = ±40, RL = 8Ω, Rg = 50Ω; TA = +25°C, f = 1kHz unless
otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Supply Range (No Signal)
VS
Quiescent Current
Iq
Input Bias Current
ID
Input Offset Voltage
VOS
±12 − ±50
−
30
−
− 0.3 1
−10 −
10
Input Offset Current
RMS Continuous Output Power
IOS
PO d = 1%
d = 10%
RL = 4Ω, VS = ±29V
−
− 0.2
−
80
−
− 100 −
Total Harmonic Distortion
d
PO = 5W, f = 1kHz
− 0.005 −
PO = 0.1 to 50W, f = 20Hz to 15kHz
−
− 0.1
Current Limiter Threshold
ISC
Slew Rate
SR
− 6.5 −
−
15
−
Open Loop Voltage Gain
Closed Loop Voltage Gain (Note 1)
Total Input Noise
GV
GV
eN A = Curve
−
80
−
−
30
−
−
1
−
f = 20Hz to 20kHz
−
2
5
Input Resistance
Supply Voltage Rejection
Thermal Protection
Ri
SVR
TS
f = 100Hz, Vripple = 0.5Vrms
Device Muted
Device Shut Down
100 −
−
−
75
−
− 150 −
− 160 −
Stand−By Function (Ref: to Pin1)
Stand−By ON Threshold
Stand−By OFF Threshold
Stand−By Attenuation
Quiescent Current at Stand−By
VSTon
VSToff
ATTst−by
Iq st−by
−
− 1.5
3.5 −
−
70 90
−
− 0.5 −
Mute Function (Ref: to Pin 1)
Mute ON Threshold
Mute OFF Threshold
Mute Attenuation
Clip Detector
VMon
VMoff
ATTmute
−
− 1.5
3.5 −
−
60 80
−
Duty Cycle
Duty
THD = 1% RL = 10KΩ to 5V
THD = 10%
−
10
−
−
40
−
ICLEAK
Slave Function Pin 4 (Ref: to Pin 8 −VS)
Slave Threshold
VSlave
PO = 50W
−
−
1
−
−
1
Master Threshold
VMaster
3
−
−
Unit
V
mA
µA
mV
µA
W
W
%
%
A
V/µs
dB
dB
µV
µV
kΩ
dB
°C
°C
V
V
dB
mA
V
V
dB
%
%
µA
V
V
Note 1. GVmin ≥ 26dB.
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