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NTE5461 Просмотр технического описания (PDF) - NTE Electronics

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NTE5461 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward or Reverse Blocking
Current
IDRM, Rated VDRM or VRRM
IRRM
TC = +25°C
TC = +100°C
10 µA
2 mA
Instantaneous OnState Voltage
VT ITM = 30A(Peak), Pulse Width 1ms,
Duty Cycle 2%
1.7 2.0 V
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
IGT VD = 12V, RL = 30
VGT VD = 12V, RL = 30
8 15 mA
0.9 1.5 V
Holding Current
Gate Controlled TurnOn Time
Circuit Commutated TurnOff Time
Critical RateofRise of OffState
Voltage
IH
tgt
tq
dv/dt
Gate Open, VD = 12V, IT = 150mA
VD = Rated VDRM, ITM = 2A, IGR = 80mA
VD = VDRM, ITM = 2A, Pulse Width = 50µs,
dv/dt = 200V/µs, di/dt = 10A/µs,
TC = +75°C
VD = Rated VDRM, Exponential Rise,
TC = +100°C
10 20 mA
1.6 µs
25 µs
100 V/µs
.147 (3.75)
Dia Max
.420 (10.67)
Max
Anode
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
Anode

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