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NTE5360

Silicon Controlled Rectifier (SCR) 35 Amp

NTE Electronics 

NTE5360

Silicon Controlled Rectifier (SCR)

35 Amp

Absolute Maximum Ratings and Electrical Characteristics:

Repetitive Peak Off State Voltage (Gate Open, TJ = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V

Repetitive Peak Reverse Voltage (Gate Open, TJ = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 600V

RMS On−State Current (TC = +80°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 40A

Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . 400A

Peak Gate Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Peak Gate Power (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W

Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Maximum Repetitive Peak Off−State Current (At VDRM, TC = +110°C), IDRM . . . . . . . . . . . . . . 1.0mA

Maximum Repetitive Peak Reverse Current (At VRRM, TC = +110°C), IRRM . . . . . . . . . . . . . . . 1.0mA

Maximum Peak On−State Voltage (TC = +25°C, IT = 40A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V

Maximum DC Holding Current (Gate Open, TC = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Critical Rate of Rise of Off−State Voltage (Gate Open, TC = +110°C), dv/dt . . . . . . . . . . . . 200V/µs

Maximum DC Gate Trigger Current (VA = 12V, RL = 60Ω, TC = +25°C), IGT . . . . . . . . . . . . . . 25mA

Maximum DC Gate Trigger Voltage (VA = 12V, RL = 60Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . 2.0V

gate Controlled Turn−On Time (For td and tr, IGT = 150mA, TC = +25°C), tgt . . . . . . . . . . . . . . 2.5µs

Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C

Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W

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