NTE52 Просмотр технического описания (PDF) - NTE Electronics
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NTE52 Datasheet PDF : 3 Pages
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Electrical Charactetristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus)
ICEV
ICER
IEBO
IC = 100mA, IB = 0
VCEV = 750V, VBE(off) = 1.5V
VCEV = 750V, VBE(off) = 1.5V,
TC = +100°C
VCEV = 750V, RBE = 50Ω, TC = +100°C
VEB = 6V, IC = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A, TC = +100°C
IC = 5A, IB = 1A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A, TC = +100°C
Output Capacitance
Cob VCB = 10V, IE = 0, f = 1kHz
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
td
VCC = 250V, IC = 3A, IB1 = 0.4A,
tr
VBE(off) = 5V, tp = 300µs,
Duty Cycle ≤ 2%
ts
Fall Time
tf
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
tsv
IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
tc
VBE(off) = 5V
tfi
tsv
IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
tc
VBE(off) = 5V, TJ = +100°C
tfi
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
450 –
––
––
––
––
–V
0.5 mA
2.5 mA
3.0 mA
1.0 mA
8–
–
– – 1.0 V
– – 2.0 V
– – 3.0 V
– – 1.5 V
– – 1.5 V
– – 250 pF
– 0.03 0.05 µs
– 0.10 1.40 µs
– 0.40 0.50 µs
– 0.175 0.500 µs
– 0.40 – µs
– 0.15 – µs
– 0.10 – µs
– 0.70 2.0 µs
– 0.28 0.50 µs
– 0.15 0.30 µs
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