NTE362
Silicon NPN Transistor
RF Power
Description:
The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial
and commercial FM equipment operating in the 400 to 960MHz range.
Features:
D Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
D Minimum Gain = 9.0dB
D Efficiency = 60% Minimum
D RF ballasting provides protection against device damage due to load mismatch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in−lbs
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly use 5 in−lbs.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0
Emitter−Base Breakdown Voltage
Collector Cutoff Current
V(BR)CES IC = 50mA, VBE = 0
V(BR)EBO IE = 1.0mA, IC = 0
ICES VCE = 15V, VBE = 0, TC = +55°C
ICBO VCB = 15V, IE = 0
Min Typ Max Unit
16 − − V
36 − − V
4.0 − − V
− 0.2 10 mA
− − 1.0