NTE2920 Просмотр технического описания (PDF) - NTE Electronics

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NTE2920

MOSFET N–Ch, Enhancement Mode High Speed Switch

NTE Electronics 

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Drain–to–Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain–to–Source On–Resistance

Gate Threshold Voltage

V(BR)DSS

∆V(BR)DSS

∆TJ

RDS(on)

VGS(th)

VGS = 0V, ID = 250µA

Reference to +25°C, ID = 1mA

VGS = 10V, ID = 54A, Note 4

VDS = VGS, ID = 250µA

60 –

–

– 0.056 –

V

V/°C

– – 0.014 Ω

2.0 – 4.0 V

Forward Transconductance

Drain–to–Source Leakage Current

Gate–to–Source Forward Leakage

Gate–to–Source Reverse Leakage

gfs

VDS = 25V, ID = 54A, Note4

25 –

– mhos

IDSS VDS = 60V, VGS = 0V

– – 25 µA

VDS = 48V, VGS = 0V, TJ = +150°C

–

– 250 µA

IGSS VGS = 20V

– – 100 nA

IGSS VGS = –20V

– – –100 nA

Total Gate Charge

Gate–to–Source Charge

Gate–to–Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Qg

Qgs

Qgd

td(on)

tr

ID = 64A, VDS = 48V, VGS = 10V,

Note 4

VDD = 30V, ID = 64A, RG = 6.2Ω,

RD = 0.45Ω, Note 4

– – 160 nC

– – 48 nC

– – 54 nC

– 20 – ns

– 160 – ns

Turn–Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

td(off)

– 83 – ns

tf

– 150 – ns

LD

Between lead, .250in. (6.0) mm from – 5.0 –

nH

LS

package and center of die contact

– 13 – nH

Input Capacitance

Output Capacitance

Reverse Transfer Capaticance

Ciss

Coss

Crss

VGS = 0V, VDS = 25V, f = 1MHz

– 4500 – pF

– 2000 – pF

– 300 – pF

Source–Drain Ratings and Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Diode Forward Voltage

IS Note 5

ISM Note 1

VSD TJ = +25°C, IS = 90A, VGS = 0V,

Note 4

– – 70 A

– – 360 A

– – 2.5 V

Reverse Recovery Time

Reverse Recovery Charge

trr TJ = +25°C, IF = 64A,

Qrr di/dt = 100A/µs, Note 4

– 270 540 ns

– 1.1 2.2 µC

Forward Turn–On Time

ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.

Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.

Note 5. Current limited by the package, (Die Current = 90A).

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