NTE267 Просмотр технического описания (PDF) - NTE Electronics

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NTE267

Silicon NPN Transistor High Gain Darlington Power Amp, Switch

NTE Electronics 

Electrical Characteristics: (TA = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Forward Current Transfer Ratio

hFE VCE = 5V, f = 1kHz IC = 200mA 90k –

–

IC = 20mA 90k – –

Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 – – 1.5 V

Base Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 0.5mA

– – 2.0 V

Collector Cutoff Current

ICES VCE = Rated VCES, TJ = +25°C

– – 0.5 µA

ICBO VCE = Rated VCES, TJ = +150°C –

– 20 µA

Emitter Cutoff Current

IEBO VEB = 13V

– – 0.1 µA

Collector Capacitance

Ccbo VCB = 10V, f = 1MHz

– 5 10 pF

Gain Bandwidth Product

fT VCE = 5V, IC = 20mA

– 75 – MHz

Switching Times

Delay Time and Rise Time

Storage Time

Fall Time

td & tr

ts

tf

IC = 1A, IB1 = 1mA

IC = 1A, IB1 = IB2 = 1mA

IC = 1A, IB1 = IB2 = 1mA

– 100 – ns

– 350 – ns

– 800 – ns

Note 2. Pulsed measurement, 300µsec pulse width, duty cycle ≤ 2%.

.380 (9.56)

.180 (4.57)

C

.132 (3.35) Dia

.500

(12.7)

.325

1.200

(9.52)

C

(30.48)

Ref

B

.070 (1.78) x 45°

.300

Chamf

(7.62)

.050 (1.27)

E

.400

(10.16)

Min

E BC

.100 (2.54)

.100 (2.54)

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