NTE2501 Просмотр технического описания (PDF) - NTE Electronics

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NTE2501

Silicon Complementary Transistors High Voltage for Video Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2501

NTE2502

Cob VCB = 30V, f = 1MHz

– 2.6 – pF

– 3.1 – pF

Reverse Transfer Capacitance

NTE2501

NTE2502

Cre VCB = 30V, f = 1MHz

– 1.8 – pF

– 2.3 – pF

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

VCE(sat) IC = 20mA, IB = 2mA

VBE(sat) IC = 20mA, IB = 2mA

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 10µA, IC = 0

– – 600 mV

– – 1.0 V

300 – – V

300 – – V

5––V

.315 (8.0)

.118 (3.0)

Dia

.295

(7.5)

EC B

.433

(11.0)

.610

(15.5)

.130

(3.3)

.094 (2.4)

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