NTE2365 Просмотр технического описания (PDF) - NTE Electronics
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NTE2365 Datasheet PDF : 2 Pages
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NTE2365
Silicon NPN Transistor
High Voltage Horizontal Deflection Output
Features:
D High Speed: tf = 100ns typ
D High Reliability
D High Breakdown Voltage: VCBO = 1500V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 800V, IE = 0
– – 10 µA
ICES VCE = 1500V, RBE = 0
– – 1.0 mA
Collector Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0
800 – – V
Emitter Cutoff Current
IEBO VEB = 4V, IC = 0
– – 1.0 mA
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2.5A
––5V
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2.5A
– – 1.5 V
DC Current Gain
hFE(1) VCE = 5V, IC = 1A
8 – 30
hFE(2) VCE = 5V, IC = 10A
4–8
Storage Time
tstg IC = 8A, IB1 = 1.6A, IB2 = –3.2A – – 3.0 µs
Fall Time
tf
– – 0.2 µs
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