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Компоненты Описание
NTE234 Просмотр технического описания (PDF) - NTE Electronics
Номер в каталоге
Компоненты Описание
производитель
NTE234
Silicon PNP Transistor Low Noise, High Gain Amplifier
NTE Electronics
NTE234 Datasheet PDF : 2 Pages
1
2
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Saturation Voltage
Collector
–
to
–
Emitter
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
– –
0.3 V
Base
–
to
–
Emitter Voltage
V
BE
V
CE
= 6V, I
C
= 2mA
–
0.65
–
V
Transition Frequency
Collector Output Capacitance
Noise Figure
f
T
V
CE
= 6V, I
C
= 1mA
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
NF V
CE
= 6V, I
C
= 100
µ
A,
f = 10Hz, R
g
= 10k
Ω
V
CE
= 6V, I
C
= 100
µ
A,
f = 1Hz, R
g
= 10k
Ω
V
CE
= 6V, I
C
= 100
µ
A,
f = 1Hz, R
g
= 100k
Ω
–
100
–
4
––
–
MHz
–
pF
6 dB
––
2
–
3
–
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max
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