NTE2317 Просмотр технического описания (PDF) - NTE Electronics

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NTE2317

Silicon NPN Transistor High Voltage Fast Switching Power Darlington

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 1)

VCEO(sus)

ICES

ICEO

IEBO

IC = 100mA, Note 1

TJ = +25°C VCE = 500V,

TJ = +125°C VBE = 0

VCE = 450V, IB = 0

IC = 0, VEB = 5V

450 –

––

––

––

––

–V

1 mA

5 mA

1 mA

50 mA

Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 150mA

Base–Emitter Saturation Voltage

VBE(sat) IC = 8A, IB = 150mA

DC Current Gain

hFE IC = 5A, VCE = 10V

Diode Forward Voltage

VF IF = 10A

Switching Characteristics (Switching Times on Inductive Load)

– 1.09 1.8 V

– 1.77 2.2 V

300 – –

– 1.43 2.8 V

Storage Time

Fall Time

ts

VCC = 12V, VBE = 0, LB = 7mH, – 15 – µs

tf

IC = 7A, IB = 70mA, RBE = 47Ω,

Vclamp= 300V

–

0.5

–

µs

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

C

B

800Ω

50Ω

E

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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